Defects and Diffusion in Semiconductors

Defects and Diffusion in Semiconductors

An Annual Retrospective XIV

eBook - 2012
Rate this:
A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity could be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws Temporary description, more details to follow.
Publisher: Durnten-Zurich :, TTP,, [2012]
ISBN: 9783038139867
3038139866
Characteristics: 1 online resource (vii, 243 pages) : illustrations (black and white)
Additional Contributors: Fisher, D. J. - Editor

Opinion

From the critics


Community Activity

Comment

Add a Comment

There are no comments for this title yet.

Age Suitability

Add Age Suitability

There are no age suitabilities for this title yet.

Summary

Add a Summary

There are no summaries for this title yet.

Notices

Add Notices

There are no notices for this title yet.

Quotes

Add a Quote

There are no quotes for this title yet.

Explore Further

Subject Headings

  Loading...

Find it at NPL

  Loading...
[]
[]
To Top