Defects and Diffusion in Semiconductors
An Annual Retrospective XIVeBook - 2012
A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity could be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws Temporary description, more details to follow.
Publisher: Durnten-Zurich :, TTP,, 
Characteristics: 1 online resource (vii, 243 pages) : illustrations (black and white)
Alternative Title: Defects and diffusion in semiconductors XIV